Single Event Effects Publications

Publications in Single Event Effects

Explore the most influential research papers and scholarly works that have shaped Single Event Effects. Use the concept filter below to focus on a specific sub-area of research.

Single Event Effects

3.8K

Publications

147.5K

Citations

Showing yearly statistics from 2000-2026.

Page 1

	Year	Citations
Basic mechanisms and modeling of single-event upset in digital microelectronics P.E. Dodd, L. W. Massengill IEEE Transactions on Nuclear Science EngineeringComputer ArchitectureBasic MechanismsIntegrated CircuitsHardware Security	2003	1.1K
Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing D.K. Schroder, Jeff A. Babcock Journal of Applied Physics EngineeringOxide ChargesSilicon On InsulatorDefect ToleranceSemiconductor Device	2003	1K
Radiation Effects in MOS Oxides James R. Schwank, M.R. Shaneyfelt, Daniel M. Fleetwood, IEEE Transactions on Nuclear Science Hafnium OxidesElectrical EngineeringElectronic DevicesRadiation-induced Charge BuildupEngineering	2008	901
Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>E</mml:mi></mml:math>Center G. D. Watkins, J. W. Corbett Physical Review EngineeringNuclear PhysicsRadiation Materials ScienceChemistrySilicon On Insulator	1964	727
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives Gaudenzio Meneghesso, G. Verzellesi, Francesca Danesin, IEEE Transactions on Device and Materials Reliability ReliabilitySemiconductorsElectrical EngineeringElectronic DevicesEngineering	2008	632
Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's Tomohisa Mizuno, J. Okumtura, Akira Toriumi IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringPhysics	1994	569
An empirical model for device degradation due to hot-carrier injection Eiji Takeda, Norio Suzuki IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringEmpirical ModelHardware Reliability	1983	551
Terrestrial cosmic rays J. F. Ziegler IBM Journal of Research and Development Terrestrial Gamma-ray FlashesTerrestrial Cosmic RaysExperimental Nuclear PhysicsRadiation DetectionNuclear Physics	1996	544
Damage correlations in semiconductors exposed to gamma, electron and proton radiations G.P. Summers, E.A. Burke, P. Shapiro, IEEE Transactions on Nuclear Science Semiconductor TechnologyDamage MechanismEngineeringProton RadiationsPhysics	1993	538
Characterization of soft errors caused by single event upsets in CMOS processes Tanay Karnik, P. Hazucha IEEE Transactions on Dependable and Secure Computing EngineeringVlsi DesignComputer ArchitectureProcess SafetyHardware Security	2004	535
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps Tibor Grasser, Ben Kaczer, Wolfgang Goes, IEEE Transactions on Electron Devices EngineeringSwitching Oxide TrapsReaction–diffusion MechanismCharge TransportNanoelectronics	2011	462
Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation Paul Heremans, J. Witters, G. Groeseneken, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringHigh Voltage EngineeringStress-induced Leakage CurrentApplied Physics	1989	436

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